Nanowire Field Effect Junction Diode
The silicon nanowire field effect junction diode is a new semiconductor device that expands the possibilities for solar cells and related applications. Current semiconductor junctions have fixed PN junctions that are only capable of producing direct current (DC) voltage from sunlight. This device produces alternating current (AC) voltage. Producing AC directly improves the conversion of sunlight by eliminating costly power losses associated with converting DC to AC.
A dynamic PN junction occurs along a nanowire when electrical gates VG1 and VG2 are oppositely biased. In response to sunlight illumination through the transparent substrate, the junction generates an open circuit voltage. Reversing the bias voltage reverses the polarity of the junction. An alternating bias voltage AC voltage generated an AC output voltage proportional to the intensity of the sunlight. Multiple devices may be combined to produce commercially useful power. Large surface-volume ratios and low-cost self-assembly make this a cost competitive device.
Additional applications of the silicon nanowire field effect junction diode include memory devices, switches and variable transistors.
GMU Inventor Information:
Dr. Qiliang Li: https://ece.gmu.edu/people/full-time-faculty/qiliang-li; http://researchfocus.gmu.edu/node/665